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HM2300DR - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2300DR N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2300DR

Datasheet Details

Part number	HM2300DR
Manufacturer	H&M Semiconductor
File Size	687.94 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2300DR Datasheet
Additional preview pages of the HM2300DR datasheet.

Product details

Description

The HM2300DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 8.0A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

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Published: Nov 27, 2018 |