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HM2300B - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2300B N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2300B

Datasheet Details

Part number	HM2300B
Manufacturer	H&M Semiconductor
File Size	390.87 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2300B Datasheet
Additional preview pages of the HM2300B datasheet.

Product details

Description

The HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram 2300 Marking and pin assignment.

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Published: Nov 27, 2018 |