Datasheet Details
- Part number
- HM2309F
- Manufacturer
- H&M Semiconductor
- File Size
- 548.58 KB
- Datasheet
- HM2309F-HMSemiconductor.pdf
- Description
- P-Channel Enhancement Mode Power MOSFET
HM2309F Description
HM2309F P-Channel Enhancement Mode Power MOSFET .
The HM2309F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .
HM2309F Features
* VDS =-60V,ID =-5A RDS(ON) =65mΩ (Typ)@ VGS=-10V RDS(ON) =82mΩ (Typ)@ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
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