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HM2309F Datasheet - H&M Semiconductor

HM2309F - P-Channel Enhancement Mode Power MOSFET

HM2309F Features

* VDS =-60V,ID =-5A RDS(ON) =65mΩ (Typ)@ VGS=-10V RDS(ON) =82mΩ (Typ)@ VGS=-4.5V

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Excellent package for good heat dissipation Application

* Load switch

* PWM application Schem

HM2309F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM2309F

Manufacturer:

H&M Semiconductor

File Size:

548.58 KB

Description:

P-channel enhancement mode power mosfet.

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