HM2309F - P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM2309F
Manufacturer	H&M Semiconductor
File Size	548.58 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM2309F Datasheet
Additional preview pages of the HM2309F datasheet.

Product details

Description

The HM2309F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.

Features

VDS =-60V,ID =-5A RDS(ON) =65mΩ (Typ)@ VGS=-10V RDS(ON) =82mΩ (Typ)@ VGS=-4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

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Published: Jun 30, 2025 |