HM2309F Datasheet - H&M Semiconductor

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HM2309F P-Channel Enhancement Mode Power MOSFET

HM2309F P-Channel Enhancement Mode Power MOSFET .
The HM2309F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .

HM2309F-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM2309F

Manufacturer:

H&M Semiconductor

File Size:

548.58 KB

Description:

P-Channel Enhancement Mode Power MOSFET

Features

* VDS =-60V,ID =-5A RDS(ON) =65mΩ (Typ)@ VGS=-10V RDS(ON) =82mΩ (Typ)@ VGS=-4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM2309F Distributors

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HM2309F P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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