HM2309B - P-Channel Enhancement Mode Power MOSFET
HM2309B Features
* RDS(ON)≦188mΩ@VGS=-10V
* RDS(ON)≦266mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding APPLICATIONS
* Power Management
* Portable Equipment
* Battery P
