Datasheet Details
- Part number
- HM2309B
- Manufacturer
- H&M Semiconductor
- File Size
- 894.67 KB
- Datasheet
- HM2309B-HMSemiconductor.pdf
- Description
- P-Channel Enhancement Mode Power MOSFET
HM2309B Description
HM2309B P-Channel 60V(D-S) GENERAL .
The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
HM2309B Features
* RDS(ON)≦188mΩ@VGS=-10V
* RDS(ON)≦266mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
HM2309B Applications
* Power Management
* Portable Equipment
* Battery Powered System
* Load Switch
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage
Gate-Source Voltage
Symbol VDS
VGS
Maximum Ratings
-60
±20
Unit V
V
2309%
Marking and pin Assignment
SOT-23-3
📁 Related Datasheet
📌 All Tags