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HM2309B - P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM2309B P-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM2309B

Datasheet Details

Part number	HM2309B
Manufacturer	H&M Semiconductor
File Size	894.67 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM2309B Datasheet
Additional preview pages of the HM2309B datasheet.

Product details

Description

The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦188mΩ@VGS=-10V.
RDS(ON)≦266mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding.

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Published: Nov 27, 2018 |