HM3400G N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

N-Channel Enhancement Mode Power MOSFET .
The HM3400G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM3400G
Manufacturer: H&M Semiconductor
File Size: 382.72 KB
Datasheet: HM3400G-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 30V,ID = 2.0A RDS(ON) = 100mΩ (Typ) @ VGS=2.5V RDS(ON) = 75mΩ (Typ) @ VGS=4.5V RDS(ON) = 65mΩ (Typ) @ VGS=10V
* High Power and current handing capability
* Lead free product is acquired

Applications

* Load switch
* Power management Schematic diagram 3400 Marking and pin Assignment SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package 3400 HM3400G SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃

HM3400G Distributors

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HM3400G N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM3400G-like datasheet