HM3400G Datasheet - H&M Semiconductor

HM3400G, N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement Mode Power MOSFET .
The HM3400G uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

datasheet Preview Page 1 from Datasheet4u.com

HM3400G-HMSemiconductor.pdf

HM3400G Datasheet Preview — Preview of HM3400G PDF

Datasheet Details

Part number:

HM3400G

Manufacturer:

H&M Semiconductor

File Size:

382.72 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 30V,ID = 2.0A RDS(ON) = 100mΩ (Typ) @ VGS=2.5V RDS(ON) = 75mΩ (Typ) @ VGS=4.5V RDS(ON) = 65mΩ (Typ) @ VGS=10V
* High Power and current handing capability
* Lead free product is acquired

Applications

* Load switch
* Power management Schematic diagram 3400 Marking and pin Assignment SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package 3400 HM3400G SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃

HM3400G Distributors

📁 Related Datasheet

HM3401D HM3407 HM3422 HM3440 HM3-6514-9 HM3-6514B-9

📌 All Tags

HM3400G N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM3400G-like datasheet