HM3400D Datasheet - H&M Semiconductor

HM3400D, N-Channel Enhancement Mode Power MOSFET

HM3400D N-Channel Enhancement Mode Power MOSFET .
The HM3400D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

Features

* VDS = 30V,ID = 5.0A RDS(ON) < 52mΩ @ VGS=2.5V RDS(ON) < 36mΩ @ VGS=4.5V RDS(ON) < 32mΩ @ VGS=10V
* High Power and current handing capability
* Lead free product is acquired

Applications

* Load switch
* Power management SOT-23-3L top view Package Marking And Ordering Information Device Marking Device Device Package 3400D HM3400D SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol

HM3400D-HMSemiconductor.pdf