HM3400F N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM3400F N-Channel Enhancement Mode Power MOSFET .
The HM3400F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM3400F
Manufacturer: H&M Semiconductor
File Size: 333.70 KB
Datasheet: HM3400F-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 30V,ID = 4.0A RDS(ON) < 70mΩ @ VGS=2.5V RDS(ON) < 48mΩ @ VGS=4.5V RDS(ON) < 42mΩ @ VGS=10V S Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

Applications

* Load switch
* Power management SOT-23 top view Package Marking And Ordering Information Device Marking Device Device Package 3400 HM3400F SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-

HM3400F Distributors

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HM3400F N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM3400F-like datasheet