Part number:
HM3400E
Manufacturer:
H&M Semiconductor
File Size:
898.12 KB
Description:
N-channel 30v mosfet.
Datasheet Details
The HM3400E is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS * Power Management in Note book * Portable Equipment
HM3400E Features
* RDS(ON)= 450 mΩ @VGS=4.5V
* RDS(ON)= 550 mΩ @VGS=2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding DSC N-Channel 3D 3400E G1 2S Marking and pin Assignment SOT-23 t
Datasheet Details
HM3400E
H&M Semiconductor
898.12 KB
N-channel 30v mosfet.
📁 Related Datasheet
📌 All Tags