HM3400KR - N-Channel 30V MOSFET

H&M Semiconductor

HM3400KR Datasheet Preview — Preview of HM3400KR PDF

Datasheet Details

Part number	HM3400KR
Manufacturer	H&M Semiconductor
File Size	832.85 KB
Description	N-Channel 30V MOSFET
Datasheet	HM3400KR-HMSemiconductor.pdf

HM3400KR Product details

Description

The HM3400KR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. Power Management in Note book Portable Equipment Battery Powered System Load Switch

Features

ES.
RDS(ON)= 450 mΩ @VGS=4.5V.
RDS(ON)= 550 mΩ @VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding DSC N-Channel 3D 3400 G1 2S Marking and pin Assignment SOT-323 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 30 ±10 Unit V V.
Th Nov, 2013-Ver1.0.

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Published: Jul 1, 2025 |