HM3400KR Datasheet - H&M Semiconductor

HM3400KR N-Channel 30V MOSFET

The HM3400KR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS * Power Management in Note book * Portable Equipmen.

HM3400KR Features

* RDS(ON)= 450 mΩ @VGS=4.5V

* RDS(ON)= 550 mΩ @VGS=2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability

* Capable doing Cu wire bonding DSC N-Channel 3D 3400 G1 2S Marking and pin Assignment SOT-323 t

HM3400KR-HMSemiconductor.pdf