Part number:
HM3N80F
Manufacturer:
H&M Semiconductor
File Size:
1.09 MB
Description:
Silicon n-channel power mosfet.
Datasheet Details
VDSS 800 HM3N80F, the silicon N-channel Enhanced VDMOSFETs, is ID 3 obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 75 conduction loss, improve switching performance and enhance RDS(ON)Typ 4.0 the avalanche energy.
The transistor can be used in various power
HM3N80F Features
* l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test Applications： Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Pa
Datasheet Details
HM3N80F
H&M Semiconductor
1.09 MB
Silicon n-channel power mosfet.
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