HM3N80F - Silicon N-Channel Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM3N80F
Manufacturer	H&M Semiconductor
File Size	1.09 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	HM3N80F Datasheet
Additional preview pages of the HM3N80F datasheet.

Product details

Description

VDSS 800 HM3N80F, the silicon N-channel Enhanced VDMOSFETs, is ID 3 obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 75 conduction loss, improve switching performance and enhance RDS(ON)Typ 4.0 the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test.

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Published: Jul 1, 2025 |