Datasheet Details
- Part number
- HM3N10
- Manufacturer
- H&M Semiconductor
- File Size
- 400.03 KB
- Datasheet
- HM3N10-HMSemiconductor.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
HM3N10 Description
HM1 N-Channel Enhancement Mode Power MOSFET .
The HM1 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
HM3N10 Features
* VDS = 100V,ID = 2A RDS(ON) 1mΩ 7S@ VGS=10V RDS(ON) 1mΩ 7S@ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
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