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HM3N10 Datasheet - H&M Semiconductor

HM3N10, N-Channel Enhancement Mode Power MOSFET

HM1 N-Channel Enhancement Mode Power MOSFET .
The HM1 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Details

Part number:

HM3N10

Manufacturer:

H&M Semiconductor

File Size:

400.03 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID = 2A RDS(ON) 1mΩ 7S@ VGS=10V RDS(ON) 1mΩ 7S@ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM3N10 Distributors

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HM3N10 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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