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HM3N10 - N-Channel Enhancement Mode Power MOSFET

HM3N10 Description

HM1 N-Channel Enhancement Mode Power MOSFET .
The HM1 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM3N10 Features

* VDS = 100V,ID = 2A RDS(ON) 1mΩ 7S @ VGS=10V RDS(ON) 1mΩ 7S @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

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Datasheet Details

Part number
HM3N10
Manufacturer
H&M Semiconductor
File Size
400.03 KB
Datasheet
HM3N10-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM3N10-like datasheet