Part number:
HM3N10
Manufacturer:
H&M Semiconductor
File Size:
400.03 KB
Description:
N-channel enhancement mode power mosfet.
Datasheet Details
HM3N10 Features
* VDS = 100V,ID = 2A RDS(ON) 1mΩ 7S @ VGS=10V RDS(ON) 1mΩ 7S @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation Application
* Power switching application
* Hard
Datasheet Details
HM3N10
H&M Semiconductor
400.03 KB
N-channel enhancement mode power mosfet.
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