HM3N30R Silicon N-Channel Power MOSFET

H&M Semiconductor

Description

HM3N30R Silicon N-Channel Power MOSFET General .
VDSS 300 V HM3N30R, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.

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Datasheet Specifications

Part number: HM3N30R
Manufacturer: H&M Semiconductor
File Size: 510.96 KB
Datasheet: HM3N30R-HMSemiconductor.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Vo

HM3N30R Distributors

📁 Related Datasheet

HM3-6514-9 HM3-6514B-9 HM3-6514S-9 HM3-65764 HM3-65787 HM3-65788

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HM3N30R Silicon N-Channel Power MOSFET H&M Semiconductor

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