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HM3N30R - Silicon N-Channel Power MOSFET

HM3N30R Description

HM3N30R Silicon N-Channel Power MOSFET General .
VDSS 300 V HM3N30R, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.

HM3N30R Applications

* Power switch circuit of LCD Power and adaptor. Absolute(Tc= 25℃ unless otherwise specified): Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Vo

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Datasheet Details

Part number
HM3N30R
Manufacturer
H&M Semiconductor
File Size
510.96 KB
Datasheet
HM3N30R-HMSemiconductor.pdf
Description
Silicon N-Channel Power MOSFET

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