Part number:
HM3N30R
Manufacturer:
H&M Semiconductor
File Size:
510.96 KB
Description:
Silicon n-channel power mosfet.
Datasheet Details
VDSS 300 V HM3N30R, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.6 Ω performance and enhance the avalanche energy.
The transistor can be used in
HM3N30R Features
* l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS
Datasheet Details
HM3N30R
H&M Semiconductor
510.96 KB
Silicon n-channel power mosfet.
📁 Related Datasheet
📌 All Tags