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HM3N30R Datasheet - H&M Semiconductor

HM3N30R Silicon N-Channel Power MOSFET

VDSS 300 V HM3N30R, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.6 Ω performance and enhance the avalanche energy. The transistor can be used in .

HM3N30R Features

* l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol VDSS

HM3N30R-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM3N30R

Manufacturer:

H&M Semiconductor

File Size:

510.96 KB

Description:

Silicon n-channel power mosfet.

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HM3N30R HM3N30R Silicon N-Channel Power MOSFET H&M Semiconductor

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