Part number:
HM3N20PR
Manufacturer:
H&M Semiconductor
File Size:
1.24 MB
Description:
200v n-channel enhancement mode mosfet.
Datasheet Details
HM3N20PR Features
* VDS = 200V,ID =3A RDS(ON) < 1300mΩ @ VGS=10V (Typ:1000mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits Uninterruptible power
Datasheet Details
HM3N20PR
H&M Semiconductor
1.24 MB
200v n-channel enhancement mode mosfet.
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