Datasheet4U Logo Datasheet4U.com

HM3N20PR Datasheet - H&M Semiconductor

HM3N20PR - 200V N-Channel Enhancement Mode MOSFET

HM3N20PR Features

* VDS = 200V,ID =3A RDS(ON) < 1300mΩ @ VGS=10V (Typ:1000mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits Uninterruptible power

HM3N20PR-HMSemiconductor.pdf

Preview of HM3N20PR PDF
HM3N20PR Datasheet Preview Page 2 HM3N20PR Datasheet Preview Page 3

Datasheet Details

Part number:

HM3N20PR

Manufacturer:

H&M Semiconductor

File Size:

1.24 MB

Description:

200v n-channel enhancement mode mosfet.

📁 Related Datasheet

📌 All Tags