Datasheet Details
- Part number
- HM3N150A
- Manufacturer
- H&M Semiconductor
- File Size
- 367.33 KB
- Datasheet
- HM3N150A-HMSemiconductor.pdf
- Description
- silicon N-channel Enhanced VDMOSFET
HM3N150A Description
+01$ General .
HM3N150A the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve swi.
HM3N150A Features
* Fast Switching
* Low ON Resistance(Rdson≤8.0Ω)
* Low Gate Charge (Typical Data: 9.3nC)
* Low Reverse transfer capacitances(Typical:2.4 pF)
HM3N150A Applications
* Power switch circuit of adaptor and charger. Absolute(TJ= 25℃ unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
TJ,Tstg TL
Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Sou
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