HM3N150A Datasheet - H&M Semiconductor

HM3N150A, silicon N-channel Enhanced VDMOSFET

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HM3N150A the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swi.

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Datasheet Details

Part number:

HM3N150A

Manufacturer:

H&M Semiconductor

File Size:

367.33 KB

Description:

silicon N-channel Enhanced VDMOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤8.0Ω)
* Low Gate Charge (Typical Data: 9.3nC)
* Low Reverse transfer capacitances(Typical:2.4 pF)

Applications

* Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current TC = 25 °C Continuous Drain Current TC = 100 °C Pulsed Drain Current TC = 25 °C Gate-to-Sou

HM3N150A Distributors

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HM3N150A silicon N-channel Enhanced VDMOSFET H&M Semiconductor

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