Part number:
HM3N150A
Manufacturer:
H&M Semiconductor
File Size:
367.33 KB
Description:
Silicon n-channel enhanced vdmosfet.
Datasheet Details
HM3N150A the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and h
HM3N150A Features
* Fast Switching
* Low ON Resistance(Rdson≤8.0Ω)
* Low Gate Charge (Typical Data: 9.3nC)
* Low Reverse transfer capacitances(Typical:2.4 pF)
* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwi
Datasheet Details
HM3N150A
H&M Semiconductor
367.33 KB
Silicon n-channel enhanced vdmosfet.
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