HM3N80K - Silicon N-Channel Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM3N80K
Manufacturer	H&M Semiconductor
File Size	1.28 MB
Description	Silicon N-Channel Power MOSFET
Datasheet	HM3N80K Datasheet
Additional preview pages of the HM3N80K datasheet.

Product details

Description

VDSS 800 HM3N80K, the silicon N-channel Enhanced VDMOSFETs, is ID 3 obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 75 conduction loss, improve switching performance and enhance RDS(ON)Typ 4.0 the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and TO-/ higher efficiency.The package form is TO-252, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤4.8Ω) l Low Gate Charge (Typical Data:18nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche energy Test.

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Published: Jul 1, 2025 |