Part number:
HM40N25
Manufacturer:
H&M Semiconductor
File Size:
0.99 MB
Description:
250v n-channel mosfet.
Datasheet Details
This Power MOSFET is produced using H&M semi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices a
HM40N25 Features
* - 40A, 250V, RDS(on) typ. = 0.079Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability HM40N25 HM40N25F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG
Datasheet Details
HM40N25
H&M Semiconductor
0.99 MB
250v n-channel mosfet.
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