HM40N25F, HM40N25 Datasheet - H&M Semiconductor

HM40N25F - 250V N-Channel MOSFET

This Power MOSFET is produced using H&M semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices a

HM40N25F Features

* - 40A, 250V, RDS(on) typ. = 0.079Ω@VGS = 10 V - Low gate charge ( typical 55 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability HM40N25 HM40N25F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG

HM40N25-HMSemiconductor.pdf