HM4402C - N-Channel Enhancement Mode Power MOSFET

Description

The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =20V,ID =12A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 11mΩ @ VGS=10V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current Schematic diagram HM4402C.

H&M Semiconductor

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Datasheet Details

Part number	HM4402C
Manufacturer	H&M Semiconductor
File Size	429.66 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4402C Datasheet
Additional preview pages of the HM4402C datasheet.

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Full PDF Text Transcription

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HM4402C N-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Nov 27, 2018 |