HM4452 - N-Channel Enhancement Mode Power MOSFET
HM4452 Features
* VDS = 100V,ID =10A RDS(ON) < 17mΩ @ VGS=10V (Typ:14mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current Schematic diagram Application
* DC/DC Primary Side Switch
* Tel
