HM5N60I, HM5N60K - 600V N-Channel MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM5N60I, HM5N60K
Manufacturer	H&M Semiconductor
File Size	448.63 KB
Description	600V N-Channel MOSFET
Datasheet	HM5N60K-HMSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HM5N60I, HM5N60K. Please refer to the document for exact specifications by model.

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

4.5A, 600V, RDS(on) = 2.50Ω @VGS = 10 V.
Low gate charge ( typical 16nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D.
TO-252 TO-251 ◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Vo.

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Published: Jun 21, 2025 |