HM5N65F, HM5N65 - 650V N-Channel MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM5N65F, HM5N65
Manufacturer	H&M Semiconductor
File Size	446.30 KB
Description	650V N-Channel MOSFET
Datasheet	HM5N65-HMSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HM5N65F, HM5N65. Please refer to the document for exact specifications by model.

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

4.5A, 650V, RDS(on) = 3.0 @VGS = 10 V.
Low gate charge ( typical 15nC).
High ruggedness.
Fast wsitching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter+01+01)8QLWV VDSS Drain-Source Voltage 650 V ID Drain Current - Continuous (TC = 25°C) 4.5 4.5.
A - Continuous (TC = 100°C.

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Published: Jul 1, 2025 |