HMS190N04D N-Channel Super Trench Power MOSFET

H&M Semiconductor

Description

N-Channel Super Trench Power MOSFET .
The HMS190N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Specifications

Part number: HMS190N04D
Manufacturer: H&M Semiconductor
File Size: 418.57 KB
Datasheet: HMS190N04D-HMSemiconductor.pdf
Description: N-Channel Super Trench Power MOSFET

Features

* VDS =40V,ID =185A RDS(ON)=1.0mΩ (typical) @ VGS=10V RDS(ON)=1.4mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 150 °C operating temperature
* Pb-free lead plating

HMS190N04D Distributors

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HMS190N04D N-Channel Super Trench Power MOSFET H&M Semiconductor

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