HMS190N04D Datasheet - H&M Semiconductor

HMS190N04D - N-Channel Super Trench Power MOSFET

The HMS190N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching

HMS190N04D Features

* VDS =40V,ID =185A RDS(ON)=1.0mΩ (typical) @ VGS=10V RDS(ON)=1.4mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

Datasheet Details

HMS190N04D

H&M Semiconductor

418.57 KB

N-channel super trench power mosfet.

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