HMS190N04D Datasheet - H&M Semiconductor

HMS190N04D N-Channel Super Trench Power MOSFET

The HMS190N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

HMS190N04D Features

* VDS =40V,ID =185A RDS(ON)=1.0mΩ (typical) @ VGS=10V RDS(ON)=1.4mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

HMS190N04D-HMSemiconductor.pdf

HMS190N04D Datasheet Preview — Preview of HMS190N04D PDF

Datasheet Details

Part number:

HMS190N04D

Manufacturer:

H&M Semiconductor

File Size:

418.57 KB

Description:

N-channel super trench power mosfet.

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HMS190N04D HMS190N04D N-Channel Super Trench Power MOSFET H&M Semiconductor

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