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HM8810B Dual N-Channel MOSFET

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Description

Dual N-Channel Enhancement Mode Power MOSFET .
The HM8810% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number
HM8810B
Manufacturer
H&M semi
File Size
661.45 KB
Datasheet
HM8810B-HMsemi.pdf
Description
Dual N-Channel MOSFET

Features

* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired

HM8810B Distributors

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Dual N-Channel MOSFET H&M semi
H&M semi HM8810B-like datasheet