HM8810B

Dual N-Channel MOSFET

H&M semi

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Datasheet Details

Part number:

HM8810B

Manufacturer:

H&M semi

File Size:

661.45 KB

Description:

Dual n-channel mosfet.
Dual N-Channel Enhancement Mode Power MOSFET Description The HM8810% uses advanced trench technology.
The HM8810% uses advanced trench technology to provide excellent RDS(ON), low gate charge and operat.

✔ HM8810B Features

VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
High Power and current handing capability
Lead free product is acquired

✔ HM8810B Application

.It is ESD protested. General Features
VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.

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HM8810B Dual N-Channel MOSFET H&M semi

Datasheet Details

File Size:

Description:

✔ HM8810B Features

✔ HM8810B Application

HM8810B Distributor