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HM8810E

Dual N-Channel Enhancement Mode Power MOSFET

HM8810E Features

* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM

* High Power and current handing capability

* Lead free product is acquired

* Surface Mount Package Schematic diagram 8810 Marking and pin Assignment Marking and pin Assignment Applicatio

HM8810E Datasheet (673.17 KB)

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Preview of HM8810E PDF

Datasheet Details

Part number:

HM8810E

Manufacturer:

H&M semi

File Size:

673.17 KB

Description:

Dual n-channel enhancement mode power mosfet.

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Stock and price

Distributor
NTE Electronics Inc
BD911
0 In Stock
Unit Price : $0

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HM8810E Dual N-Channel Enhancement Mode Power MOSFET H&M semi

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