HM8810E Dual N-Channel Enhancement Mode Power MOSFET

H&M semi

Description

HM8810E Dual N-Channel Enhancement Mode Power MOSFET .
The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM8810E
Manufacturer: H&M semi
File Size: 673.17 KB
Datasheet: HM8810E-HMsemi.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package Schematic diagram 8810 Marking and pin Assignment Marking and pin Assignment Applicatio

HM8810E Distributors

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