HM8810E - Dual N-Channel Enhancement Mode Power MOSFET

H&M semi

Datasheet Details

Part number	HM8810E
Manufacturer	H&M semi
File Size	673.17 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	HM8810E-HMsemi.pdf

The HM8810E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram 8810 Marking and pin Assignment Marking and pin Assignment.

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Published: Apr 12, 2021 |