A1SHB P-Channel Trench Power MOSFET

H&M Semiconductor

A1SHB Description

HM2301B P-Channel Enhancement Mode Power MOSFET .
The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

A1SHB Features

* VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V
* High power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number: A1SHB
Manufacturer: H&M Semiconductor
File Size: 803.79 KB
Datasheet: A1SHB-HMSemiconductor.pdf
Description: P-Channel Trench Power MOSFET

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P-Channel Trench Power MOSFET H&M Semiconductor

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