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HM60N06 - Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number: HM60N06
Manufacturer: H&M Semiconductor
File Size: 377.08 KB
Datasheet: HM60N06-HMSemiconductor.pdf
Description: Power MOSFET

HM60N06 Product details

Description

The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 60V,ID =60A RDS(ON) < 12mΩ @ VGS=10V (Typ:10.2mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Application.
Power switching application.
Hard switched and High frequency circuits.
Uninterruptible power supply MM Schematic diagram Marking and pin assi.

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