HMS8N65I - N-Channel Super Junction Power MOSFET

H&M Semiconductor

Datasheet Details

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge.This super junction.

New technology for high voltage device.
Low on-resistance and low conduction losses.
Small package.
Ultra Low Gate Charge cause lower driving requirements.
100% Avalanche Tested.
ROHS compliant VDS 650 V RDS(ON) MAX 540 mΩ ID 8 A Application.
Power factor correction（PFC）.
Switched mode power supplies(SMPS).
Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking HMS8N65I TO.

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