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2N60 Datasheet - HAOHAI

2N60 N-Channel MOSFET

2N60 Features

*   Originative New Design   Superior Avalanche Rugged Technology   Robust Gate Oxide Technology   Very Low Intrinsic Capacitances   Excellent Switching Characteristics   Unrivalled Gate Charge: 5.5nC(Typ.)   Extended Safe Operating Area   Lower RDS(ON): 4.0Ω(Typ.) @ VGS=10V   100% Avalanche Tested   

2N60 Datasheet (395.16 KB)

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Datasheet Details

Part number:

2N60

Manufacturer:

HAOHAI

File Size:

395.16 KB

Description:

N-channel mosfet.

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TAGS

2N60 N-Channel MOSFET HAOHAI

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