2N60 Datasheet - HAOHAI

2N60, N-Channel MOSFET

2A, 600V, N H FQU2N60C FQD2N60C H2N60U H2N60D 2N60 HAOHAI U: TO-251 D: TO-252 80/ 2.5K/ 2N60 Series N-Channel MOSFET 4Kpcs/ 5K.

Features

* 　　Originative New Design 　　Superior Avalanche Rugged Technology 　　Robust Gate Oxide Technology 　　Very Low Intrinsic Capacitances 　　Excellent Switching Characteristics 　　Unrivalled Gate Charge: 5.5nC(Typ. ) 　　Extended Safe Operating Area 　　Lower RDS(ON): 4.0Ω(Typ. ) @ VGS=10V 　　100% Avalanche Tested 　　

2N60-HAOHAI.pdf