* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 5.5nC(Typ.) Extended Safe Operating Area Lower RDS(ON): 4.0Ω(Typ.) @ VGS=10V 100% Avalanche Tested
2N60
HAOHAI
395.16 KB
N-channel mosfet.
2A, 600V, N
H
FQU2N60C FQD2N60C
H2N60U H2N60D
2N60
HAOHAI
U: TO-251 D: TO-252
80/ 2.5K/
2N60 Series
N-Channel MOSFET
4Kpcs/ 5K.
📁 Related Datasheet
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The 2N60 is a high voltage MOSFET and is designed to have better characteristics, suc.
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2A,600V,RDS(ON)=4Ω@VGS=10V/1A Low gate charge Low Ciss Fast switching 100% avala.
