HD1H15A N-Channel Enhancement Mode MOSFET

Description

100VDS／±20VGS／15A(ID) N-Channel Enhancement Mode MOSFET HD1H15A .

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Datasheet Specifications

Part number: HD1H15A
Manufacturer: HAOLIN
File Size: 2.23 MB
Datasheet: HD1H15A-HAOLIN.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* VDSS=100V／VGSS=±20V／ID=15A RDS(ON)=105mΩ(Max. )@VGS=10V RDS(ON)=175mΩ(Max. )@VGS=4.5V
* ESD protect
* Reliable and Rugged

Applications

* Synchronous Rectification
* Power Management in Inverter System TO-252 TO-251 HD1H15A 1.Gate 2. Drain 3. Source Physical Characteristics Switching Time Test Circuit and Waveforms
* Wafer Diameter 8 inches (± 0.1 inche)
* Wafer Thickness: 8mils (±0.6 mil)
* Die size: 1700μm x

HD1H15A Distributors

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HD1H15A N-Channel Enhancement Mode MOSFET HAOLIN

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