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HD1H15A - N-Channel Enhancement Mode MOSFET

HD1H15A Description

100VDS／±20VGS／15A(ID) N-Channel Enhancement Mode MOSFET HD1H15A .

HD1H15A Features

* VDSS=100V／VGSS=±20V／ID=15A RDS(ON)=105mΩ(Max. )@VGS=10V RDS(ON)=175mΩ(Max. )@VGS=4.5V
* ESD protect
* Reliable and Rugged

HD1H15A Applications

* Synchronous Rectification
* Power Management in Inverter System TO-252 TO-251 HD1H15A 1.Gate 2. Drain 3. Source Physical Characteristics Switching Time Test Circuit and Waveforms
* Wafer Diameter 8 inches (± 0.1 inche)
* Wafer Thickness: 8mils (±0.6 mil)
* Die size: 1700μm x

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Datasheet Details

Part number
HD1H15A
Manufacturer
HAOLIN
File Size
2.23 MB
Datasheet
HD1H15A-HAOLIN.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET HAOLIN
HAOLIN HD1H15A-like datasheet