HD60N03 Datasheet - HAOLIN

HD60N03, 30V N-Channel MOSFET

HD60N03_HU60N03 Nov 2009 HD60N03 / HU60N03 30V N-Channel MOSFET BVDSS = 30 V RDS(on) = 9mΩ ID = 60 A .

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Datasheet Details

Part number:

HD60N03

Manufacturer:

HAOLIN

File Size:

1.40 MB

Description:

30V N-Channel MOSFET

Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 9mΩ (Typ. ) @V GS=10V  100% Avalanche Test

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HD60N03 30V N-Channel MOSFET HAOLIN

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