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HD60N03

30V N-Channel MOSFET

HD60N03 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 9mΩ (Typ.) @V GS=10V  100% Avalanche Test

HD60N03 Datasheet (1.40 MB)

Preview of HD60N03 PDF

Datasheet Details

Part number:

HD60N03

Manufacturer:

HAOLIN

File Size:

1.40 MB

Description:

30v n-channel mosfet.

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HD60N03 30V N-Channel MOSFET HAOLIN

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