BT169

SCRs

HAOPIN

BT169 Features

* Blocking voltage to 600 V On-state RMS current to 0.8 A Ultra low gate trigger current SYMBOL VDRM IT RMS ITSM PARAMETER Repetitive peak off-state voltages BT169D BT169G RMS on-state current full sine wave Non-repetitive peak on-state current (full cycle,Tj initial=25 ) Value 400 600 0.8 8 Un

BT169 General Description

Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Symbol Sim.

BT169 Datasheet (205.94 KB)

BT169 Datasheet Preview — Preview of BT169 PDF

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BT169

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HAOPIN

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205.94 KB

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BT169 SCRs HAOPIN

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BT169 Features

BT169 General Description

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