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HY1115D Datasheet - HOOYI

HY1115D N-Channel Enhancement Mode MOSFET

HY1115D Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C IDM Pulsed Drain Current ID Continuous Drain Current PD Maximum Power Dissipation TC=25°C TC=25°C TC=100°C TC=25°C Tc=100°C RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to A.

HY1115D-HOOYI.pdf

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Datasheet Details

Part number:

HY1115D

Manufacturer:

HOOYI

File Size:

410.15 KB

Description:

N-channel enhancement mode mosfet.

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HY1115D HY1115D N-Channel Enhancement Mode MOSFET HOOYI

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