HY1106S
HY1106S is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Features
- 60V / 11A
RDS(ON)= 13 m Ω (typ.) @ VGS=10V RDS(ON)=13.5mΩ (typ.) @ VGS=4.5V
- Avalanche Rated
- Reliable and Rugged
- Lead Free and Green Devices Available
(Ro HS pliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DD DD S
Top View of SOP-8
Applications
- Power Management in DC/DC Converter
N-Channel MOSFET
Ordering and Marking Information
S HY1106
YYÿ XXXJWW G
Package Code S : SOP-8
Date Code YYXXX WW
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with Ro HS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
.hooyi.cc
Absolute Maximum Ratings
Symbol
Parameter
Rating mon Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
60 ±20 175 -55 to 175 11
IDM Pulsed Drain Current
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