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HY1106S Datasheet N-channel Enhancement Mode MOSFET

Manufacturer: HUAYI

Overview: HY1106S.

Datasheet Details

Part number HY1106S
Manufacturer HUAYI
File Size 4.31 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet HY1106S-HUAYI.pdf

General Description

DD DD S S S G Top View of SOP-8 Applications · Power Management in DC/DC Converter D G N-Channel MOSFET S Ordering and Marking Information S HY1106 YYÿ XXXJWW G Package Code S : SOP-8 Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish;

which are fully pliant with RoHS.

HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.

Key Features

  • 60V / 11A RDS(ON)= 13 m Ω (typ. ) @ VGS=10V RDS(ON)=13.5mΩ (typ. ) @ VGS=4.5V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

HY1106S Distributor