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HY1106S - N-Channel Enhancement Mode MOSFET

General Description

DD DD S S S G Top View of SOP-8 Applications Power Management in DC/DC Converter D G N-Channel MOSFET S Ordering and Marking Information S HY1106 YYÿ XXXJWW G Package Code S : SOP-8 Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain moldin

Key Features

  • 60V / 11A RDS(ON)= 13 m Ω (typ. ) @ VGS=10V RDS(ON)=13.5mΩ (typ. ) @ VGS=4.5V.
  • Avalanche Rated.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin.

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Datasheet Details

Part number HY1106S
Manufacturer HUAYI
File Size 4.31 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1106S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY1106S Features • 60V / 11A RDS(ON)= 13 m Ω (typ.) @ VGS=10V RDS(ON)=13.5mΩ (typ.) @ VGS=4.5V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) N-Channel Enhancement Mode MOSFET Pin Description DD DD S S S G Top View of SOP-8 Applications · Power Management in DC/DC Converter D G N-Channel MOSFET S Ordering and Marking Information S HY1106 YYÿ XXXJWW G Package Code S : SOP-8 Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.