G DS
G DS
S GD
TO-252-2L
TO-251-3L
TO-251-3S
Applications
Power Management for Inverter Systems
Ordering and Marking Information
D
U
V
HY1210 HY1210 HY1210
YYXXXJWW G YYXXXJWW G YYXXXJWW G
Package Code
D: TO-252-2L
V: TO-251-3S Date Code YYXXX WW
N-Channel MOSFET U: TO-251-3L
N
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HY1210D/U/V
N-Channel Enhancement Mode MOSFET
Feature
100V/26A RDS(ON) = 32mΩ(typ.)@VGS = 10V RDS(ON) = 34mΩ(typ.)@VGS = 4.5V
100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available
(RoHS Compliant)
Pin Description
G DS
G DS
S GD
TO-252-2L
TO-251-3L
TO-251-3S
Applications
Power Management for Inverter Systems
Ordering and Marking Information
D
U
V
HY1210 HY1210 HY1210
YYXXXJWW G YYXXXJWW G YYXXXJWW G
Package Code
D: TO-252-2L
V: TO-251-3S Date Code YYXXX WW
N-Channel MOSFET U: TO-251-3L
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.