Datasheet4U Logo Datasheet4U.com

HY1210D - N-Channel Enhancement Mode MOSFET

General Description

G DS G DS S GD TO-252-2L TO-251-3L TO-251-3S Applications Power Management for Inverter Systems Ordering and Marking Information D U V HY1210 HY1210 HY1210 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D: TO-252-2L V: TO-251-3S Date Code YYXXX WW N-Channel MOSFET U: TO-251-3L N

📥 Download Datasheet

Datasheet Details

Part number HY1210D
Manufacturer HUAYI
File Size 1.96 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1210D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1210D/U/V N-Channel Enhancement Mode MOSFET Feature  100V/26A RDS(ON) = 32mΩ(typ.)@VGS = 10V RDS(ON) = 34mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description G DS G DS S GD TO-252-2L TO-251-3L TO-251-3S Applications  Power Management for Inverter Systems Ordering and Marking Information D U V HY1210 HY1210 HY1210 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D: TO-252-2L V: TO-251-3S Date Code YYXXX WW N-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.