• Part: HY1210D
  • Description: N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.96 MB
Download HY1210D Datasheet PDF
HUAYI
HY1210D
HY1210D is N-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature - 100V/26A RDS(ON) = 32mΩ(typ.)@VGS = 10V RDS(ON) = 34mΩ(typ.)@VGS = 4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen Free and Green Devices Available (Ro HS pliant) Pin Description G DS G DS S GD TO-252-2L TO-251-3L TO-251-3S Applications - Power Management for Inverter Systems Ordering and Marking Information HY1210 HY1210 HY1210 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D: TO-252-2L V: TO-251-3S Date Code YYXXX WW N-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish; which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. .hymexa. 1 V1.1 HY1210D/U/V Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Maximum Junction Temperture TSTG...