• Part: HY12P03C2
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 1.03 MB
Download HY12P03C2 Datasheet PDF
HUAYI
HY12P03C2
HY12P03C2 is P-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Feature Description - -30V/-50A RDS(ON)= 10.4mΩ(typ.) @VGS = -10V RDS(ON)= 14.2mΩ(typ.) @VGS = -4.5V - 100% Avalanche Tested - Reliable and Rugged - Halogen- Free Devices Available P-Channel Enhancement Mode MOSFET Pin Description D DD D D DD D SSSG GSSS Pin1 PPAK5- 6-8L Applications - High Frequency Point-of-Load Synchronous Buck Converter - Power Tool Application - Networking DC-DC Power System Ordering and Marking Information P-Channel MOSFET C2 HY12P03 YYXXXJWW G Package Code C2: PPAK5- 6-8L Date Code YYXXX WW Assembly Material G:Halogen Free Note: HUAYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate Termi Nation finish;which are fully pliant with Ro HS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this product and/or to this document at any time without notice. .hymexa. 1 V1.0 Absolute Maximum Ratings Symbol Parameter mon Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage Maximum Junction Temperature TSTG Storage Temperature...