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HY1210V - N-Channel Enhancement Mode MOSFET

Download the HY1210V datasheet PDF. This datasheet also covers the HY1210D variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

G DS G DS S GD TO-252-2L TO-251-3L TO-251-3S Applications Power Management for Inverter Systems Ordering and Marking Information D U V HY1210 HY1210 HY1210 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D: TO-252-2L V: TO-251-3S Date Code YYXXX WW N-Channel MOSFET U: TO-251-3L N

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Note: The manufacturer provides a single datasheet file (HY1210D-HUAYI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HY1210V
Manufacturer HUAYI
File Size 1.96 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY1210V Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HY1210D/U/V N-Channel Enhancement Mode MOSFET Feature  100V/26A RDS(ON) = 32mΩ(typ.)@VGS = 10V RDS(ON) = 34mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description G DS G DS S GD TO-252-2L TO-251-3L TO-251-3S Applications  Power Management for Inverter Systems Ordering and Marking Information D U V HY1210 HY1210 HY1210 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D: TO-252-2L V: TO-251-3S Date Code YYXXX WW N-Channel MOSFET U: TO-251-3L Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.