• Part: HY12P03S
  • Description: P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: HUAYI
  • Size: 4.29 MB
Download HY12P03S Datasheet PDF
HUAYI
HY12P03S
HY12P03S is P-Channel Enhancement Mode MOSFET manufactured by HUAYI.
Features - -30V / -12A RDS(ON)=11.5 m Ω (typ.) @ VGS=-10V RDS(ON)=16.5 m Ω (typ.) @ VGS=-4.5V - Avalanche Rated - Reliable and Rugged - Lead Free and Green Devices Available (Ro HS pliant) P -Channel Enhancement Mode MOSFET Pin Description DD DD S Top View of SOP-8 Applications - Power Management in DC/DC Converter P-Channel MOSFET Ordering and Marking Information S HY12P03 YYÿ XXXJWW G Package Code S : SOP-8 Date Code YYXXX WW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding pounds/die attach materials and 100% matte tin plate termination finish; which are fully pliant with Ro HS. HOOYI lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (Ro HS pliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. .hooyi.cc Absolute Maximum Ratings Symbol Parameter Rating mon Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C -30 ±20 150 -55 to 150 -12 IDM Pulsed Drain Current - ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=70 °C TC=25°C TC=70°C -48- - -12 -10 3.1 2.0 40...