HY3215B
HY3215P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating mon Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
150 ±25 175 -55 to 175 120
IDM Pulsed Drain Current
- ID Continuous Drain Current
PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
480-
- 120 84 300 150 0.5 62.5
EAS Avalanche Energy, Single Pulsed
L=0.5m H
Note
- Repetitive rating ; pulse width limiited by junction temperature
- - Drain current is limited by junction temperature
- -
- VD=100V
1025-
- -
Electrical Characteristics
(T C
=
25°C
Unless
Otherwise
Noted)
Unit
V °C °C A A A W °C/W m J
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate...
