HY3215M Datasheet, Mosfet, HOOYI

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Part number:

HY3215M

Manufacturer:

HOOYI

File Size:

759.00kb

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📄 Datasheet

Description:

N-channel enhancement mode mosfet.

TAGS

HY3215M

HOOYI

📁 Related Datasheet

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.

HY3215B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.

HY3215P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.

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HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGS.

HY3210B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .

HY3210B - N-Channel 100V MOSFET (VBsemi)
HY3210B-VB HY3210B-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.010 at VGS = 10 V 100 0.023 at.

HY3210M - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .

HY3210P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .

HY3210PM - N-Channel Enhancement Mode MOSFET (HOOYI)
HY3210P/M/B/PS/PM Features • 100V/120A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices .