HY3712M
HOOYI
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N-channel mosfet.
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HY3712B - N-Channel MOSFET
(HOOYI)
HY3712P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGS.
HY3712P - N-Channel MOSFET
(HOOYI)
HY3712P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGS.
HY3712PM - N-Channel MOSFET
(HOOYI)
HY3712P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGS.
HY3712PS - N-Channel MOSFET
(HOOYI)
HY3712P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGS.
HY3704B - N-Channel MOSFET
(HOOYI)
HY3704P/B
N-Channel Enhancement Mode MOSFET
Features
• 40V/176A
RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY3704P - N-Channel MOSFET
(HOOYI)
HY3704P/B
N-Channel Enhancement Mode MOSFET
Features
• 40V/176A
RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY3708B - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3708P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/170A
RDS(ON) = 3.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rug.
HY3708M - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3708P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/170A
RDS(ON) = 3.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rug.
HY3708P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3708P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/170A
RDS(ON) = 3.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rug.
HY3708PM - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3708P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Features
• 80V/170A
RDS(ON) = 3.8 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rug.