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HYG065N07NS1U - N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the HYG065N07NS1U, a member of the HYG065N07NS1D N-Channel Enhancement Mode MOSFET family.

Description

GDS TO-252-2L GDS TO-251-3L GDS TO-251-3S Applications Switching application Power Management for Inverter Systems Motor control N-Channel MOSFET Ordering and Marking Information D G065N07 XYMXXXXXX U G065N07 XYMXXXXXX V G065N07 XYMXXXXXX Package Code D: TO-252-2L U: TO-2

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Datasheet Details

Part number HYG065N07NS1U
Manufacturer HOOYI
File Size 606.76 KB
Description N-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

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HYG065N07NS1D/U/V N-Channel Enhancement Mode MOSFET Feature  70V/70A RDS(ON)= 6mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen Free and Green Devices Available (RoHS Compliant) Pin Description GDS TO-252-2L GDS TO-251-3L GDS TO-251-3S Applications  Switching application  Power Management for Inverter Systems  Motor control N-Channel MOSFET Ordering and Marking Information D G065N07 XYMXXXXXX U G065N07 XYMXXXXXX V G065N07 XYMXXXXXX Package Code D: TO-252-2L U: TO-251-3L V:TO-251-3S Date Code XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS.
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