RFM117 Datasheet, Transmitters, HOPERF

RFM117 Features

• Transmitters
• Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable
• Frequency Range: y 240 to 480 MHz (RFM110) y 240 to 960 MHz (RFM117)
• OOK Mod

PDF File Details

Part number:

RFM117

Manufacturer:

HOPERF

File Size:

365.72kb

Download:

📄 Datasheet

Description:

Single-chip ook transmitters. The RFM110/RFM117 devices are ultra low-cost, highly flexible, high performance, single-chip OOK transmitters for various 240 to 960

RFM117 Application

• Applications The RFM110A covers the frequency range from 240 to 480 MHz while the RFM117 covers the 240 to 960 MHz frequency range. They are part o

TAGS

RFM117

HOPERF

📁 Related Datasheet

RFM110 - single-chip OOK transmitters (HOPERF)
Features „ Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable „ Frequency Range: y 240 to 480 MHz (RFM110) y 240 to 960 MH.

RFM110W - single-chip OOK transmitters (HOPERF)
Features „ Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable „ Frequency Range: y 240 to 480 MHz (RFM110W) y 240 to 960 M.

RFM113W - single-chip (G)FSK/OOK transmitters (HOPERF)
Features „ Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable „ Frequency Range: 240 to 480 MHz „ OOK, FSK and GFSK Modula.

RFM117W - single-chip OOK transmitters (HOPERF)
Features „ Embedded EEPROM y Very Easy Development with RFPDK y All Features Programmable „ Frequency Range: y 240 to 480 MHz (RFM110W) y 240 to 960 M.

RFM10N12 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS (GE Solid State)
.

RFM10N15 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS (GE Solid State)
.

RFM10N45 - N-Channel Power MOSFET (Intersil Corporation)
Semiconductor RFM10N45, RFM10N50 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate.

RFM10N50 - N-Channel Power MOSFET (Intersil Corporation)
Semiconductor RFM10N45, RFM10N50 10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate.

RFM10P12 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS (GE Solid State)
.

RFM10P12 - (RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS (GE Solid State)
.