HFF2N60 Datasheet (HUASHAN ELECTRONIC)

HFF2N60, N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd.

N-Channel MOSFET HFF2N60 APPLICATIONSL High-Speed Switching.

ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current Tc=25 5 5 ~1 5 0 150 23W 600V ±30V 2.0A TO-220F 1G 2D 3S ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Dra