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HFF2N60 Datasheet - HUASHAN ELECTRONIC

HFF2N60 N-Channel MOSFET

Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF2N60 APPLICATIONSL High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current Tc=25 5 5 ~1 5 0 150 23W 600V ±30V 2.0A TO-220F 1G 2D 3S ELECTRICAL CHARACTERISTICS Ta=25 Symbol Characteristics Min Typ BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Dra.

HFF2N60 Datasheet (228.41 KB)

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Datasheet Details

Part number:

HFF2N60

Manufacturer:

HUASHAN ELECTRONIC

File Size:

228.41 KB

Description:

N-channel mosfet.

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HFF2N60 N-Channel MOSFET HUASHAN ELECTRONIC

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