HY1606D N-Channel Enhancement Mode MOSFET

HUAYI

Description

HY1606D/U/V .
GDS TO-252-2L GDS TO-251-3L GDS TO-251-3L Applications. Power Management for Inverter Systems.

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Datasheet Specifications

Part number: HY1606D
Manufacturer: HUAYI
File Size: 842.85 KB
Datasheet: HY1606D-HUAYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* 60V/66A, RDS(ON)=10.4 m(typ. ) @ VGS=10V
* Avalanche Rated
* Reliable and Rugged

Applications

* Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET D U V HY1606 HY1606 HY1606 YYXXXJWW G YYXXXJWW G YYXXXJWW G Package Code D : TO-252-2L V : TO-251-3S Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free

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HY1606D N-Channel Enhancement Mode MOSFET HUAYI

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