HY1606P Datasheet, Mosfet, HOOYI

HY1606P Features

  • Mosfet
  • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V
  • 100% avalanche tested
  • Reliable and Rugged
  • Lead Free and Green Devices Available (RoHS Compliant) Pin

PDF File Details

Part number:

HY1606P

Manufacturer:

HOOYI

File Size:

2.64MB

Download:

📄 Datasheet

Description:

N-channel enhancement mode mosfet. DS G TO-220FB-3L DS G TO-263-2L Applications

  • Switching application
  • Power Management for Inverter Systems. D G

  • Datasheet Preview: HY1606P 📥 Download PDF (2.64MB)
    Page 2 of HY1606P Page 3 of HY1606P

    HY1606P Application

    • Applications
    • Switching application
    • Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Informatio

    TAGS

    HY1606P
    N-Channel
    Enhancement
    Mode
    MOSFET
    HOOYI

    📁 Related Datasheet

    HY1606AP - N-Channel Enhancement Mode MOSFET (HOOYI)
    HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free .

    HY1606B - N-Channel MOSFET (HOOYI)
    HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

    HY1603 - N-Channel MOSFET (HOOYI)
    HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

    HY1603D - N-Channel MOSFET (HOOYI)
    HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

    HY1603S - N-Channel MOSFET (HOOYI)
    HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

    HY1603U - N-Channel MOSFET (HOOYI)
    HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

    HY1607 - N-Channel MOSFET (HOOYI)
    HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • L.

    HY1607A - N-Channel MOSFET (HOOYI)
    HY1607AP/M/B/MF/PS/PM Features • 68V/80A R = 6.5m(typ.) @ V =10V DS(ON) GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Gre.

    HY1607AB - N-Channel MOSFET (HOOYI)
    HY1607AP/M/B/MF/PS/PM Features • 68V/80A R = 6.5m(typ.) @ V =10V DS(ON) GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Gre.

    HY1607AM - N-Channel MOSFET (HOOYI)
    HY1607AP/M/B/MF/PS/PM Features • 68V/80A R = 6.5m(typ.) @ V =10V DS(ON) GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Gre.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts