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HY1606P

N-Channel Enhancement Mode MOSFET

HY1606P Features

* 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V

* 100% avalanche tested

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-263-2L Applications

* Switching application

* Power Managem

HY1606P General Description

DS G TO-220FB-3L DS G TO-263-2L Applications

* Switching application

* Power Management for Inverter Systems. D G N-Channel MOSFET Ordering and Marking Information S PB HY1606 HY1606 YYÿ XXXJWW G YYÿ XXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assem.

HY1606P Datasheet (2.64 MB)

Preview of HY1606P PDF

Datasheet Details

Part number:

HY1606P

Manufacturer:

HOOYI

File Size:

2.64 MB

Description:

N-channel enhancement mode mosfet.

📁 Related Datasheet

HY1606AP - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free .

HY1606B - N-Channel MOSFET (HOOYI)
HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY1603 - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603D - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603S - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603U - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1607 - N-Channel MOSFET (HOOYI)
HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • L.

HY1607A - N-Channel MOSFET (HOOYI)
HY1607AP/M/B/MF/PS/PM Features • 68V/80A R = 6.5m(typ.) @ V =10V DS(ON) GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Gre.

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HY1606P N-Channel Enhancement Mode MOSFET HOOYI

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