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HY1606P - N-Channel Enhancement Mode MOSFET

HY1606P Description

HY1606P/B N-Channel Enhancement Mode MOSFET .
DS G TO-220FB-3L G DS TO-263-2L Applications. Switching application. Power Management for Inverter Systems.

HY1606P Features

* 60V/66A RDS(ON) = 10.4 m(typ. ) @ VGS=10V
* 100% avalanche tested
* Reliable and Rugged

HY1606P Applications

* Switching application
* Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET P B HY1606 HY1606 YYXXXJWW G YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free produc

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Datasheet Details

Part number
HY1606P
Manufacturer
HOOYI
File Size
622.17 KB
Datasheet
HY1606P-HOOYI.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET HOOYI
HOOYI HY1606P-like datasheet