HY1603D Datasheet, Mosfet, HOOYI

HY1603D Features

• Mosfet
• 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed
• Super Low Gate Charge
• Excellent CdV/dt effect decline
• Advanced high cell d

PDF File Details

Part number:

HY1603D

Manufacturer:

HOOYI

File Size:

1.11MB

Download:

📄 Datasheet

Description:

N-channel mosfet. S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications

High Frequency Synchronous Buck Converters for Computer Pr

HY1603D Application

• Applications
• High Frequency Synchronous Buck Converters for Computer Processor Power
• High Frequency Isolated DC-DC Converters wi

TAGS

HY1603D

HOOYI

📁 Related Datasheet

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HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603S - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1603U - N-Channel MOSFET (HOOYI)
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V • 100% EAS Guaranteed • Super Low Gate Charge • Ex.

HY1606AP - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free .

HY1606B - N-Channel MOSFET (HOOYI)
HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY1606P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.

HY1607 - N-Channel MOSFET (HOOYI)
HY1607D/U/V N-Channel Enhancement Mode MOSFET Features • 68V/70A RDS(ON) = 6.8 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • L.

HY1607A - N-Channel MOSFET (HOOYI)
HY1607AP/M/B/MF/PS/PM Features • 68V/80A R = 6.5m(typ.) @ V =10V DS(ON) GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Gre.

HY1607AB - N-Channel MOSFET (HOOYI)
HY1607AP/M/B/MF/PS/PM Features • 68V/80A R = 6.5m(typ.) @ V =10V DS(ON) GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Gre.

HY1607AM - N-Channel MOSFET (HOOYI)
HY1607AP/M/B/MF/PS/PM Features • 68V/80A R = 6.5m(typ.) @ V =10V DS(ON) GS • 100% avalanche tested • Reliable and Rugged • Lead Free and Gre.