Part number:
HY1603D
Manufacturer:
HOOYI
File Size:
1.11 MB
Description:
N-channel mosfet.
* 30V/62A, RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
* 100% EAS Guaranteed
* Super Low Gate Charge
* Excellent CdV/dt effect decline
* Advanced high cell density Trench technology
* Halogen - Free Device Available Pin Description S D G TO-252-2L S D G TO-251-
HY1603D
HOOYI
1.11 MB
N-channel mosfet.
📁 Related Datasheet
HY1603 - N-Channel MOSFET
(HOOYI)
HY1603D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 30V/62A,
RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Ex.
HY1603S - N-Channel MOSFET
(HOOYI)
HY1603D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 30V/62A,
RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Ex.
HY1603U - N-Channel MOSFET
(HOOYI)
HY1603D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 30V/62A,
RDS(ON)= 4.0mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Ex.
HY1606AP - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1606AP
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free .
HY1606B - N-Channel MOSFET
(HOOYI)
HY1606P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/66A
RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY1606P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1606P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/66A
RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY1607 - N-Channel MOSFET
(HOOYI)
HY1607D/U/V
N-Channel Enhancement Mode MOSFET
Features
• 68V/70A
RDS(ON) = 6.8 m(typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • L.
HY1607A - N-Channel MOSFET
(HOOYI)
HY1607AP/M/B/MF/PS/PM
Features
• 68V/80A
R = 6.5m(typ.) @ V =10V
DS(ON)
GS
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Gre.
