Datasheet4U Logo Datasheet4U.com

HY1603S - N-Channel MOSFET

This page provides the datasheet information for the HY1603S, a member of the HY1603 N-Channel MOSFET family.

Description

S D G TO-252-2L S D G TO-251-3L S D G TO-251-3L Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Ordering and Marking Information D G N-

Features

  • 30V/62A, RDS(ON)= 4.0mΩ (typ. ) @ VGS=10V.
  • 100% EAS Guaranteed.
  • Super Low Gate Charge.
  • Excellent CdV/dt effect decline.
  • Advanced high cell density Trench technology.
  • Halogen - Free Device Available Pin.

📥 Download Datasheet

Datasheet preview – HY1603S

Datasheet Details

Part number HY1603S
Manufacturer HOOYI
File Size 1.11 MB
Description N-Channel MOSFET
Datasheet download datasheet HY1603S Datasheet
Additional preview pages of the HY1603S datasheet.

📁 Similar Datasheet

  • HY1603C2 - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY1606D - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY1606U - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY1606V - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY1607APM - N-Channel MOSFET (HUAYI)
  • HY1607APM - N-Channel MOSFET (HUAYI)
  • HY161XX02 - 16 CHAR X 1 LINE (HYES Optoelectronics)
  • HY162XX01 - 16 CHAR X 2 LINE (HYES Optoelectronics)
  • HY162XX02 - 16 CHAR X 2 LINE (HYES Optoelectronics)
  • HY162XX03 - 16 CHAR X 2 LINE (HYES Optoelectronics)
Other Datasheets by HOOYI

Full PDF Text Transcription

Click to expand full text
HY1603D/U/S N-Channel Enhancement Mode MOSFET Features • 30V/62A, RDS(ON)= 4.0mΩ (typ.
Published: |