HY2N7002E

N-Channel Enhancement Mode MOSFET

HUAYI

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HY2N7002E

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HUAYI

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N-channel enhancement mode mosfet.
HY2N7002E N-Channel Enhancement Mode MOSFET Feature * 60V/200mA RDS(ON)= 2.4Ω(typ.) @ VGS = 10V RD.
D S G SOT-23-3L N-Channel MOSFET Product type XX Date Code WW Note: HUAYI lead-free products contai.

✔ HY2N7002E Application

Networking
Switching application
Hand-held Instruments Ordering and Marking Information Pin Descripti

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HY2N7002E N-Channel Enhancement Mode MOSFET HUAYI

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