IRFBC42 N-Channel Power MOSFET

Harris Corporation

Description

Semiconductor IRFBC40, IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

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Datasheet Specifications

Part number: IRFBC42
Manufacturer: Harris Corporation
File Size: 66.92 KB
Datasheet: IRFBC42_HarrisCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 6.2A and 5.4A, 600V
* rDS(ON) = 1.2Ω and 1.6Ω
* Repetitive Avalanche Energy Rated
* Simple Drive Requirements
* Ease of Paralleling
* Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information P

Applications

* such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17426. January 1998

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IRFBC42 N-Channel Power MOSFET Harris Corporation

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