HBD675, HBD675_Hi NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6619-C Issued Date : 1994.07.22 Revised Date : 2000.10.01 Page No.: 1/3 HBD675 NPN EPITAXIAL PLAN.
The HBD675 is designed for use as output devices in complementary general purpose amplifier applications.

📥 Download Datasheet

HBD675 Datasheet Preview — This datasheet PDF includes multiple part numbers: HBD675, HBD675_Hi. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HBD675, HBD675_Hi
Manufacturer: Hi-Sincerity Mocroelectronics
File Size: 30.23 KB
Datasheet: HBD675_Hi-SincerityMocroelectronics.pdf
Description: NPN EPITAXIAL PLANAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: HBD675, HBD675_Hi.
Please refer to the document for exact specifications by model.

Applications

* Absolute Maximum Ratings(Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage 45 V BVCEO

HBD675 Distributors

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HBD675_Hi NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics

Hi-Sincerity Mocroelectronics HBD675-like datasheet