The HBD675 is designed for use as output devices in complementary general purpose amplifier applications.
Absolute Maximum Ratings(Ta=25°C) * Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum * Maximum Power Dissipation Total Power Dissipa
HBD675_Hi-SincerityMocroelectronics.pdf
Datasheet Details
HBD675, HBD675_Hi
Hi-Sincerity Mocroelectronics
30.23 KB
Npn epitaxial planar transistor.
This datasheet PDF includes multiple part numbers: HBD675, HBD675_Hi.
Please refer to the document for exact specifications by model.
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