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HBD675, HBD675_Hi NPN EPITAXIAL PLANAR TRANSISTOR

HBD675 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6619-C Issued Date : 1994.07.22 Revised Date : 2000.10.01 Page No.: 1/3 HBD675 NPN EPITAXIAL PLAN.
The HBD675 is designed for use as output devices in complementary general purpose amplifier applications.

HBD675 Applications

* Absolute Maximum Ratings(Ta=25°C)
* Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 20 W
* Maximum Voltages and Currents BVCBO Collector to Base Voltage 45 V BVCEO

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HBD675, HBD675_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HBD675, HBD675_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
30.23 KB
Datasheet
HBD675_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: HBD675, HBD675_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics HBD675-like datasheet